Nano-Micro Letters

Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure

Yantao Chen2, Xiaohan Wu2, Yingli Chu2, Jiachen Zhou2, Bilei Zhou2, Jia Huang1, 2, *

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Nano-Micro Lett. (2018) 10: 57

First Online: 28 May 2018 (Article)


*Corresponding author. E-mail: huangjia@tongji.edu.cn





The outstanding performances of nanostructured all-inorganic CsPbX3 (X = I, Br, Cl) perovskites in optoelectronic applications can be attributed to their unique combination of a suitable bandgap, high absorption coefficient, and long carrier lifetime, which are desirable for photodetectors. However, the photo-sensing performances of the CsPbI3 nanomaterials are limited by their low charge-transport efficiency. In this study, a phototransistor with a bilayer structure of an organic semiconductor layer of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and CsPbI3 nanorod layer was fabricated. The high-quality CsPbI3 nanorod layer obtained using a simple dip-coating method provided decent transistor performance of the hybrid transistor device. The perovskite layer efficiently absorbs light, while the organic semiconductor layer acts as a transport channel for injected photo-generated carriers and provides gate modulation. The hybrid phototransistor exhibits high performance owing to the synergistic function of the photo-gating effect and field-effect in the transistor, with a photoresponsivity as high as 4,300 A W-1, ultra-high photosensitivity of 2.2 × 106, and excellent stability over one month. This study provides a strategy to combine the advantages of perovskite nanorods and organic semiconductors in fabrication of high-performance photodetectors.



Perovskite; Phototransistor; Nanorod; Organic semiconductor; Photo-gating effect

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