Nano-Micro Letters

Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect -Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics

Feng Li1, Tao Shen2, Cong Wang1, Yupeng Zhang1, Junjie Qi2, *, Han Zhang1, *

Abstract
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Nano-Micro Lett. (2020) 12: 106

First Online: 04 May 2020 (Review)

DOI:10.1007/s40820-020-00439-9

*Corresponding author. E-mail: junjieqi@ustb.edu.cn (Junjie Qi), hzhang@szu.edu.cn (Han Zhang)

 

Abstract

 


Toc

The development of two-dimensional (2D) semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness, unique structure, excellent optoelectronic properties and novel physics. The excellent flexibility and outstanding mechanical strength of 2D semiconductors provide opportunities for fabricated strain sensitive devices and utilized strain tuning their electronic and optic-electric performance. The strain engineered one-dimensional materials have been well investigated, while there is a long way to go for 2D semiconductors. In this review, starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain, following we reviewed the recent simulation works of strain engineering in novel 2D semiconductors, such as Janus 2D and 2D-Xene structures. Moreover, recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2D semiconductors are summarized. Furthermore, the applications of strain engineered 2D semiconductors in sensors, photodetectors and nanogenerators are also highlighted. At last, we in-depth discussed future research directions of strain engineered 2D semiconductor and related electronics and optoelectronics device applications.


 

Keywords

2D semiconductors, Strain, Piezoelectric effect, Piezoresistive effect, Electronic and optoelectronics

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