23August2019

Nano-Micro Letters

Efficient CNTFET-based Ternary Full Adder Cells for Nanoelectronics

Mohammad Hossein Moaiyeri1Reza Faghih Mirzaee2Keivan Navi3Omid Hashemipour4

Abstract
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Nano-Micro Letters, , Volume 3, Issue 1, pp 43-50
Publication Date (Web): April 19, 2011 (Article)
DOI:10.3786/nml.v3i1.p43-50

 

Abstract

 


Figure 1 (a) A typical CNTFET device; Different types of CNTFET device (b) SB-CNTFET (c) MOSFET-like CNTFET (d) T-CNTFET.

This paper presents two new efficient ternary Full Adder cells for nanoelectronics. These CNTFET-based ternary Full Adders are designed based on the unique characteristics of the CNTFET device, such as the capability of setting the desired threshold voltages by adopting proper diameters for the nanotubes as well as the same carrier mobilities for the N-type and P-type devices. These characteristics of CNTFETs make them very suitable for designing high-performance multiple-Vth structures. The proposed structures reduce the number of the transistors considerably and have very high driving capability. The presented ternary Full Adders are simulated using Synopsys HSPICE with 32nm CNTFET technology to evaluate their performance and to confirm their correct operation.


 

Keywords

CNTFET; Multiple-Valued logic; Ternary logic; Ternary Full Adder; Multiple-Vth design

 

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